s m d e f f i c i e n t f a s t r e c o v e r y r e c t i f i e r s reverse v oltage: 50 to 600 v olts forward current: 1.0 amp rohs device page 1 rev :a features -ideal for surface mount applications. -easy pick and place. -plastic package has underwriters lab. flammability classification 94v -0. -super fast recovery time for high ef ficient. -built-in strain relief. -low forward voltage drop. mechanical data -case: jedec do-214aa, molded plastic. -t erminals: solderable per mil-std-750, method 2026. -polarity: color band denotes cathode end. -approx. weight: 0.093 grams cefb101-g thru. cefb105-g maximum ratings and electrical characteristics d i m e n s i o n s i n i n c h e s a n d ( m i l l i m e t e r ) d o - 2 1 4 a a ( s m b ) qw -be003 cefb101-g 2 no tes : 1. th erm al r esi sta nce fro m jun ctio n t o le ad mo unt ed on p .c. b. wit h 8 .0 8.0 m m cop per pa d a rea . comchip t echnology co., l td. 0.155(3.94) 0.130(3.30) 0.083(2.1 1) 0.075(1.91) 0.220(5.59) 0.200(5.08) 0.012(0.31) 0.006(0.15) 0.008(0.20) 0.004(0.10) 0.050(1.27) 0.030(0.76) 0.096(2.44) 0.083(2.13) 0.185(4.70) 0.160(4.06) max. repetitive peak reverse voltage max. dc blocking voltage max. rms voltage peak surge forward current, 8.3ms single half sine-wave superimposed on rate load (jedec method) max. average forward current max. instantaneous forward voltage at 1.0a reverse recovery time o max. dc reverse current at t a =25 c o rated dc blocking voltage t a =125 c max. thermal resistance (note 1) max. operating junction temperature storage temperature cefb102-g cefb103-g CEFB104-G cefb105-g units symbol parameter v rrm v dc v rms i fsm i o v f t rr i r r jl t j t stg 50 50 35 100 100 70 0.875 25 200 200 140 30 1.0 5.0 200 13 150 -55 to +150 400 400 280 1.1 35 600 600 420 1.25 50 v v v a a v ns a o c/w o c o c
qw -be003 ra ting and characteristic cur ves (cefb101-g thru cefb105-g) percent of rated peak reverse v oltage (%) 150 120 90 60 30 0 fig.1 reverse characteristics 0.01 0.1 1 10 100 r e v e r e u r r n ( ) s c e t a forward v oltage (v) 0 fig.2 forward characteristics 0.001 o w r d c r r e n ( a ) f r a u t 0.01 0.1 1 10 0.8 reverse v oltage (v) 0.01 fig.3 junction capacitance 0 j n t i n a p a c i a n c e ( p ) u c o c t f 5 15 30 35 0.1 1 10 100 number of cycles at 60hz fig.4 non-repetitive forward surge current 0 p e a k f o r w a r d s u r g e c u r r e n t a ) ( 20 30 50 comchip t echnology co., l td. page 2 rev :a o t j =125 c o t j =75 c o t j =25 c 0.4 1.2 2.0 1.6 cefb101-g~103-g CEFB104-G cefb105-g o t j =25 c pulse width 300 s 4% duty cycle 10 20 25 cefb101-g~103-g CEFB104-G~105-g o t j =25 c f=1mhz and applied 4vdc reverse voltage 1 10 100 10 40 o t j =25 c 8.3ms single half sine wave, jedec method fig.5 t est circuit diagram and reverse recovery t ime characteristics 50 noninductive 10 noninductive (+) 25vdc (approx.) (-) d.u.t . 1 non- inductive oscillliscope (note 1) pulse genera tor (note 2) (+) (-) notes: 1. rise time=7ns max., input impedance=1 m , 22pf . 2. rise time=10ns max., input impedance=50 . trr set time base for 50 / 10ns / cm 1cm -1.0a -0.25a 0 +0.5a fig.6 current derating curve o ambient t emperature ( c) a v e r a g e f o r w a r d c u r r e n t ( a ) 0 50 25 75 100 150 125 175 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 single phase half wave 60hz s m d e f f i c i e n t f a s t r e c o v e r y r e c t i f i e r s
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